was designed to deposit a mono-layer or thin films of metal or a semiconductor.
A wire type or a rod type evaprant can be heated with electron beam, and high
purity evaporation can be performed.
The maximum temperature is high enough to evaporate Fe, Co, Bi, Pt, Ag, Mo, Ta, W, etc. It is capable of using crucibles, and the user may use Ta and Mo as an option.
AEV-11 has a build-in flux monitor. The way it works is similar to that of an ion gauge. It monitors the deposition rate by measuring the ion current from the ionized molecules which have been evaporated
and crushed into the electrons. It can control and stabilize
the deposition-area size. The user can easily replace the evaporant
of the AEV-11 through the φ34 ICF flange without removing the evaporator
from the chamber every time for a material exchange.